Samsung announced that it has made a significant advancement in the push for higher volume memory chips by developing the world’s first four gigabit (Gb) DDR3 DRAM chip, using 50 nanometer (nm) process technology.
With more and more data centers seeking a reduction in the number of servers they use, the development of low-power 4Gb DDR3 chips helps reduce data center costs, improve server time management and increase overall efficiency. For the new generation of “green” servers, the 4Gb DDR3’s high density combined with its lower level of power consumption should provide an overall reduction in electricity bills with the chips’ higher efficiency.
The 4Gb DDR3 chips can be produced in 16 gigabyte (GB) registered dual in-line memory modules (RDIMM) for servers, 8GB unbuffered DIMM (UDIMM) for workstations and desktop PCs, and 8GB small outline DIMM (SODIMM) for laptops. By applying dual-die package technology, this new device can deliver modules of up to 32GB – offering twice as much capacity as memory modules based on the previous highest chip density of 2Gb.
Designed to be low-powered, the 4Gb DDR3 DRAM operates at 1.35 volts (V), improving its throughput by 20 percent over earlier DDR3 modules that run on 1.5V. Its maximum speed is 1.6 gigabits per second (Gbps).
In 16GB module configurations, 4Gb DDR3 can consume 40 percent less power than 2Gb DDR3 because of its higher density and because it uses only half the DRAM (32 vs. 64 chips).
