
Samsung announced that it has made a significant advancement in the push for higher volume memory chips by developing the world’s first four gigabit (Gb) DDR3 DRAM chip, using 50 nanometer (nm) process technology.
With more and more data centers seeking a reduction in the number of servers they use, the development of low-power 4Gb DDR3 chips helps reduce data center costs, improve server time management and increase overall efficiency. For the new generation of “green” servers, the 4Gb DDR3’s high density combined with its lower level of power consumption should provide an overall reduction in electricity bills with the chips’ higher efficiency.
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